Title :
Adaptive regridding for high temperature electrothermal device simulations
Author :
Chang, Mi-Chang ; Chern, Jue-Hsien
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The problems of prematured snapback and false multiple breakdown are found in simulating semiconductor devices in the high temperature region. The only way to achieve accurate and efficient electrothermal simulation under these conditions is by adaptive regridding. An adaptive regridding algorithm that approaches the optimal efficiency by applying the equidistribution of local truncation error is developed. With this algorithm both problems are overcome. In addition, both simulation accuracy and efficiency are improved by at least a factor of two.
Keywords :
digital simulation; electronic engineering computing; mesh generation; semiconductor device models; adaptive regridding; algorithm; electrothermal device simulations; equidistribution; false multiple breakdown; high temperature; local truncation error; optimal efficiency; prematured snapback; semiconductor device simulation; Computational modeling; Computer errors; Contacts; Electric breakdown; Electrothermal effects; Finite wordlength effects; Semiconductor device breakdown; Semiconductor devices; Temperature; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263646