Experimental Study of Metallic Emitter SiGeC HBTs

Author

Barbalat, B. ; Judong, F. ; Rubaldo, L. ; Chevalier, P. ; Proust, M. ; Richard, Cedric ; Borot, G. ; Vandelle, B. ; Saguin, F. ; Dutartre, D. ; Zerounian, N. ; Aniel, F. ; Chantre, Alain

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20 K on As-doped mono-emitter layers are also reported, which help understand the physics of hole injection in highly doped emitters. The optimization of the process is detailed, and a significant increase of the f_T times BV_CEO product in metallic emitter SiGe HBTs is finally demonstrated

Keywords

BiCMOS integrated circuits; Hall effect; germanium compounds; heterojunction bipolar transistors; silicon compounds; BiCMOS; HBT; Hall effect; SiGeC; high speed; hole diffusion; metallic emitter; BiCMOS integrated circuits; Doping profiles; Fabrication; Germanium silicon alloys; Hall effect; Heterojunction bipolar transistors; Physics; Silicidation; Silicon germanium; Variable speed drives; BiCMOS; HBT; Hall effect; SiGeC; high-speed; hole diffusion; metallic emitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311166

Filename

4100234