Title :
Schottky Barrier Diodes for Millimeter Wave SiGe BiCMOS Applications
Author :
Rassel, R.M. ; Johnson, J.B. ; Orner, B.A. ; Reynolds, S.K. ; Dahlström, M.E. ; Rascoe, J.S. ; Joseph, A.J. ; Gaucher, B.P. ; Dunn, J.S. ; Onge, S. A St
Author_Institution :
Syst. & Technol. Group, IBM, Essex Junction, VT
Abstract :
For the first time, a high performance, low leakage Schottky barrier diode (SBD) with cutoff frequency above 1.0 THz in a 130nm SiGe BiCMOS technology for millimeter-wave application is described. Device optimization has been evaluated by varying critical process and layout parameters such as, anode size, cathode depth, cathode resistivity, junction tailoring, and guardring optimization is investigated
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Schottky diodes; millimetre wave integrated circuits; BiCMOS process technology; Schottky barrier diodes; SiGe; cutoff frequency; millimeter wave BiCMOS; millimeter wave diodes; millimeter wave technology; Anodes; BiCMOS integrated circuits; Cathodes; Conductivity; Cutoff frequency; Germanium silicon alloys; Millimeter wave technology; Schottky barriers; Schottky diodes; Silicon germanium; BiCMOS process technology; Schottky diodes; cutoff frequency; millimeter wave diodes; millimeter wave technology; terahertz (THz);
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311167
