Title :
Simulation of read-disturb lifetime reduction in submicron EPROM devices
Author :
Peng, Zezhong ; Hsu, James ; Liu, Bill ; Kwan, Ming ; Longcor, Steve ; Frey, Jeffrey
Author_Institution :
Adv. Micro Devices, MS/177, Sunnyvale, CA, USA
Abstract :
An accurate and efficient physical simulation method, based on a 2-D energy transport model and Monte Carlo calculated hot electron energy distribution, has been used to simulate the read-disturb lifetime reduction of deep-submicron EPROM devices. This method has been validated by data of a 0.5 mu m EPROM technology and used to predict the read disturb lifetime for the 0.35 mu m technology generation.
Keywords :
CMOS integrated circuits; EPROM; Monte Carlo methods; VLSI; circuit analysis computing; hot carriers; integrated memory circuits; 0.35 micron; 0.5 micron; 2-D energy transport model; Monte Carlo calculated; hot electron energy distribution; read-disturb lifetime reduction; simulation method; submicron EPROM devices; Charge carrier processes; Distribution functions; EPROM; Educational institutions; Electron mobility; Extrapolation; Hafnium; Monte Carlo methods; Poisson equations; Secondary generated hot electron injection;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263649
