• DocumentCode
    3499484
  • Title

    High RF performances asymmetric spacer NLDMOS integration in a 0.25μm SiGe:C BiCMOS Technology

  • Author

    Szelag, Bertrand ; Muller, Dorothée ; Mourier, Jocelyne ; Arnaud, C. ; Bilgen, Halim ; Judong, Fabienne ; Giry, Alexandre ; Pache, Denis ; Monroy, Agustin

  • Author_Institution
    Centre Commun de Microelectronique de Crolles, STMicroelectronics, Crolles
  • fYear
    2006
  • fDate
    8-10 Oct. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An asymmetrical spacer LDMOSFET integrated in a 0.25μm BiCMOS technology is presented. Improved RF performances are obtained with this new architecture: fT close to 35GHz with BVds larger than 15V. Process integration strategy is discussed. Impact on the other devices is described.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MOSFET; carbon; millimetre wave integrated circuits; 0.25 micron; LDMOSFET; NLDMOS integration; SiGe:C; SiGe:C BiCMOS technology; asymmetric spacer; process integration strategy; BiCMOS integrated circuits; FETs; Low voltage; MOSFETs; Parasitic capacitance; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers; Space technology; Power Amplifier; Power MOSFETs; RF optimization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2006
  • Conference_Location
    Maastricht
  • ISSN
    1088-9299
  • Print_ISBN
    1-4244-0458-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2006.311114
  • Filename
    4100249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3499484