SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics

Author

Najafizadeh, Laleh ; Zhu, Chendong ; Krithivasan, Ramkumar ; Cressler, John D. ; Cui, Yan ; Niu, Guofu ; Chen, Suheng ; Ulaganathan, Chandradevi ; Blalock, Benjamin J. ; Joseph, Alvin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

We present the first investigation of the optimal implementation of SiGe BiCMOS precision voltage references for extreme temperature range applications (+120 degC to -180 degC and below). We have developed and fabricated two unique Ge profiles optimized specifically for cryogenic operation, and for the first time compare the impact of Ge profile shape on precision voltage reference performance down to -180 degC. Our best case reference achieves a 28.1 ppm/ degC temperature coefficient over +27 degC to -180 degC, more than adequate for the intended lunar electronics applications

Keywords

BiCMOS integrated circuits; Ge-Si alloys; cryogenic electronics; reference circuits; 27 to -180 C; Ge profiles; SiGe; SiGe BiCMOS; cryogenic operation; extreme temperature range electronics; precision voltage references; BiCMOS integrated circuits; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Moon; Robustness; Silicon germanium; Temperature distribution; USA Councils; Voltage; SiGe HBT; analog circuits; cryogenic temperature; device physics; voltage reference;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311117

Filename

4100252