• DocumentCode
    3499641
  • Title

    Multi-zone model for the transient enhanced diffusion of ion implanted impurities in silicon during rapid thermal annealing

  • Author

    Huang, T.H. ; Kinoshita, H. ; Kwong, D.L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • fYear
    1993
  • fDate
    1993
  • Firstpage
    315
  • Lastpage
    319
  • Abstract
    A diffusion model for ion-implanted BF2+ ions in Si for rapid thermal annealing application has been developed based on the effects of defect evolution on dopant diffusion. In addition, a simple, accurate and universal precipitation model has been developed for high dose implantation. Simulation results show excellent agreement with the experimental results.
  • Keywords
    boron compounds; diffusion in solids; elemental semiconductors; ion implantation; precipitation; rapid thermal processing; semiconductor process modelling; silicon; RTA; Si:BF2; VLSI device design; defect evolution effect; diffusion model; dopant diffusion; ion implanted impurities; precipitation model; rapid thermal annealing; semiconductor; transient enhanced diffusion; Amorphous materials; Implants; Impurities; Ion implantation; Rapid thermal annealing; Semiconductor process modeling; Silicon; Substrates; Tail; Thermal engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
  • Conference_Location
    Taipei, Taiwan
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-0978-2
  • Type

    conf

  • DOI
    10.1109/VTSA.1993.263670
  • Filename
    263670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3499641