Title :
Lithography for the 32-nm Node and Beyond
Author :
Burghartz, J.N. ; Irmscher, M. ; Letzkus, F. ; Kretz, J. ; Resnick, D.
Author_Institution :
Inst. for Microelectron. Stuttgart
Abstract :
This review article presents, discusses and compares three emerging photo lithography techniques for use in future BiCMOS fabrication processes: EUV lithography, e-beam direct write, and nano imprint. Specific challenges are discussed and the state-of-the-art is illustrated with respect to bipolar device scaling
Keywords :
BiCMOS integrated circuits; electron beam lithography; nanolithography; soft lithography; ultraviolet lithography; 32 nm; BiCMOS fabrication processes; EUV lithography; bipolar device scaling; e-beam direct write lithography; nano imprint lithography; photolithography techniques; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Doping profiles; Germanium silicon alloys; Lithography; Microelectronics; Radio frequency; Silicon germanium; Voltage; E-beam; EUV; Silicon bipolar/BiCMOS process technology; bipolar scaling; nano imprint; photo lithography;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311125
