• DocumentCode
    3500
  • Title

    SOI Field-Effect Diode DRAM Cell: Design and Operation

  • Author

    Badwan, Ahmad Z. ; Chbili, Zakariae ; Yang Yang ; Salman, Adnan Ahmed ; Qiliang Li ; Ioannou, Dimitris E.

  • Author_Institution
    Electr. & Comput. Eng. Dept., George Mason Univ., Fairfax, VA, USA
  • Volume
    34
  • Issue
    8
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    1002
  • Lastpage
    1004
  • Abstract
    A dynamic RAM cell based on the field-effect diode (FED) is presented, and its operation is described and explained with the help of numerical device simulations. This new cell resembles the thin capacitively coupled thyristor (TCCT) cell in concept and operation, however it has important advantages. These advantages derive from the fact that the thyristor-like mode of operation of the FED is gate induced, whereas the TCCT is an actual, built-in thyristor. High read 0/1 current margin, fast write/read time, good retention, and densely packed cells are obtained.
  • Keywords
    DRAM chips; silicon-on-insulator; thyristors; DRAM cell; SOI FED; SOI field-effect diode; Si; TCCT cell; built-in thyristor; dynamic RAM cell; numerical device simulations; thin capacitively coupled thyristor cell; thyristor-like mode; Dynamic RAM (DRAM); FBC; field-effect diode (FED); silicon-on-insulator (SOI);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2265552
  • Filename
    6544600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3500