DocumentCode
3500643
Title
Graphene transistors 2011
Author
Schwierz, Frank
Author_Institution
Tech. Univ. Ilmenau, Ilmenau, Germany
fYear
2011
fDate
25-27 April 2011
Firstpage
1
Lastpage
2
Abstract
Graphene is a promising electronic material and numerous experts already see it as the successor of silicon. Many groups are fabricating graphene transistors, and graphene MOSFETs with record cutoff frequencies of 300 GHz have been reported. However, in spite of this progress, the prospects of graphene transistors for future electronics are still not clear. The aim of the present paper is to shed some light on the merits and problems of graphene transistors and to review their current status.
Keywords
MOSFET; graphene; millimetre wave field effect transistors; electronic material; frequency 300 GHz; graphene MOSFET; graphene transistors; Logic gates; MOSFETs; Photonic band gap; Radio frequency; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-8493-5
Type
conf
DOI
10.1109/VTSA.2011.5872213
Filename
5872213
Link To Document