• DocumentCode
    3500643
  • Title

    Graphene transistors 2011

  • Author

    Schwierz, Frank

  • Author_Institution
    Tech. Univ. Ilmenau, Ilmenau, Germany
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Graphene is a promising electronic material and numerous experts already see it as the successor of silicon. Many groups are fabricating graphene transistors, and graphene MOSFETs with record cutoff frequencies of 300 GHz have been reported. However, in spite of this progress, the prospects of graphene transistors for future electronics are still not clear. The aim of the present paper is to shed some light on the merits and problems of graphene transistors and to review their current status.
  • Keywords
    MOSFET; graphene; millimetre wave field effect transistors; electronic material; frequency 300 GHz; graphene MOSFET; graphene transistors; Logic gates; MOSFETs; Photonic band gap; Radio frequency; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872213
  • Filename
    5872213