• DocumentCode
    3500670
  • Title

    Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

  • Author

    Liu, Bin ; Yang, Mingchu ; Zhan, Chunlei ; Yang, Yue ; Yeo, Yee-Chia

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report a bias temperature instability (BTI) study of graphene Field-Effect Transistor (G-FET) for the first time. New BTI characteristics are observed for G-FETs fabricated using a graphene transfer-free process. Temperature significantly affects BTI of G-FETs by changing the direction of shift of IDS. A plausible graphene BTI mechanism is discussed.
  • Keywords
    field effect transistors; graphene; BTI characteristics; G-FET; bias temperature instability; graphene field-effect transistor; graphene transfer-free process; plausible graphene BTI mechanism; Aluminum oxide; Logic gates; Nickel; Silicon; Stress; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872215
  • Filename
    5872215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3500670