A carrier-based analytic model for undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs

Author

He, Jin ; Zhang, Xing ; Zhang, Ganggang ; Chan, Mansun ; Wang, Yangyuan

Author_Institution

Inst. of Micro-Electron., Peking Univ., Beijing

fYear

2006

fDate

27-29 March 2006

Lastpage

132

Abstract

This paper presents a carrier-based analytic model for ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs. It is based on the exact solution of the Poisson-Boltzmann equation by a carrier approach and the current continuity equation with the back interface oxide layer effect. The mode is valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them without fitting-parameters, being ideal framework for UTB MOSFET compact modeling development. We have demonstrated that the I-V characteristics obtained by this model agree with two-dimensional numerical simulations for all ranges of gate and drain voltages

Keywords

Boltzmann equation; MOSFET; Poisson equation; semiconductor device models; silicon-on-insulator; 2D numerical simulations; Poisson-Boltzmann equation; back interface oxide layer effect; carrier-based analytic model; current continuity equation; undoped ultra-thin-body silicon-on-insulator MOSFET; CMOS logic circuits; CMOS technology; MOSFETs; Numerical simulation; Physics; Poisson equations; Semiconductor device modeling; Silicon on insulator technology; Switches; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design, 2006. ISQED '06. 7th International Symposium on

Conference_Location

San Jose, CA

Print_ISBN

0-7695-2523-7

Type

conf

DOI

10.1109/ISQED.2006.5

Filename

1613125