• DocumentCode
    3501074
  • Title

    Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack

  • Author

    Gyanathan, Ashvini ; Yeo, Yee-Chia

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report a novel multi-level phase change random access memory (PCRAM) cell with a graded Ge2Sb2Te5 (GST) structure which enables multi-bit, high density storage. This work delves into the mechanism of the multilevel switching behaviour with both electrical as well as thermal analyses.
  • Keywords
    germanium compounds; phase change memories; tantalum compounds; Ge2Sb2Te5; Ge2Sb2Te5 stack; Ta2O5; Ta2O5 barrier layer; level phase change random access memory; multi-bit high density storage; multi-level PCRAM cell; Nonvolatile memory; Phase change materials; Phase change random access memory; Resistance; Silicon; Switching circuits; Thermal analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872233
  • Filename
    5872233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3501074