• DocumentCode
    3501202
  • Title

    III-V devices featuring Si transistor-like process and its heterogeneous integration on Si substrate

  • Author

    Ko, C.-H. ; Wu, C.-H. ; Cheng, C.-C. ; Lin, H.-Y. ; Lin, Y.-R. ; Wann, Clement H.

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    High mobility III-V compound semiconductors are the most attractive candidates who could provide enhanced performance for future logic applications. Even so, people still hesitate to accelerate III-V materials entering into Si CMOS world. To relieve people´s concerns, the integration of thin III-V on Si and Si transistor-like technique or architecture should be demonstrated.
  • Keywords
    III-V semiconductors; MOSFET; elemental semiconductors; silicon; CMOS; III-V devices; III-V materials; Si; high mobility III-V compound semiconductors; transistor-like process; CMOS integrated circuits; Gallium arsenide; Indium phosphide; Logic gates; Silicon; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872240
  • Filename
    5872240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3501202