• DocumentCode
    3501239
  • Title

    A new interface defect spectroscopy method

  • Author

    Ryan, J.T. ; Yu, L.C. ; Han, J.H. ; Kopanski, J.J. ; Cheung, K.P. ; Zhang, F. ; Wang, C. ; Campbell, J.P. ; Suehle, J.S. ; Tilak, V. ; Fronheiser, J.

  • Author_Institution
    NIST, Gaithersburg, MD, USA
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.
  • Keywords
    MOSFET; charge pump circuits; interface states; semiconductor device manufacture; silicon; silicon compounds; spectroscopy; Si-SiO2; interface defect spectroscopy method; interface state amphoteric nature; production quality submicron device; variable height charge pumping; Current measurement; Filling; Frequency measurement; Interface states; Production; Silicon; Pb centers; charge pumping; interface states;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872242
  • Filename
    5872242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3501239