Title :
Effect of additives on copper electroplating profile for TSV filling
Author :
Yunhui Zhu ; Yuan Bian ; Xin Sun ; Shenglin Ma ; Qinghu Cui ; Xiao Zhong ; Jing Chen ; Min Miao ; Yufeng Jin
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
Abstract :
3D integration with TSVs is emerging as a promising technology for the next generation integrated circuits. TSV filling is a critical process in TSV fabrication and has direct effect on electrical performance of TSVs. In this paper, we mainly focus on effect of additives used in methanesulfonic based solution on copper electroplating filling. Numerical simulation based on an absorption-diffusion model has been carried out with electrochemical data. TSV filling experiment results with different additive concentrations are presented and void-free TSV filling has been achieved.
Keywords :
absorption; additives; diffusion; electrochemical analysis; electronics packaging; electroplating; numerical analysis; three-dimensional integrated circuits; 3D integration; TSV fabrication; absorption-diffusion model; additive concentration; copper electroplating filling; copper electroplating profile; electrical performance; electrochemical data; methanesulfonic based solution; next generation integrated circuit; numerical simulation; void-free TSV filling; Additives; Copper; Current density; Electronics packaging; Filling; Numerical models; Through-silicon vias;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
DOI :
10.1109/ICEPT-HDP.2012.6474568
