Effect of additives on copper electroplating profile for TSV filling

Author

Yunhui Zhu ; Yuan Bian ; Xin Sun ; Shenglin Ma ; Qinghu Cui ; Xiao Zhong ; Jing Chen ; Min Miao ; Yufeng Jin

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China

fYear

2012

fDate

13-16 Aug. 2012

Firstpage

56

Lastpage

59

Abstract

3D integration with TSVs is emerging as a promising technology for the next generation integrated circuits. TSV filling is a critical process in TSV fabrication and has direct effect on electrical performance of TSVs. In this paper, we mainly focus on effect of additives used in methanesulfonic based solution on copper electroplating filling. Numerical simulation based on an absorption-diffusion model has been carried out with electrochemical data. TSV filling experiment results with different additive concentrations are presented and void-free TSV filling has been achieved.

Keywords

absorption; additives; diffusion; electrochemical analysis; electronics packaging; electroplating; numerical analysis; three-dimensional integrated circuits; 3D integration; TSV fabrication; absorption-diffusion model; additive concentration; copper electroplating filling; copper electroplating profile; electrical performance; electrochemical data; methanesulfonic based solution; next generation integrated circuit; numerical simulation; void-free TSV filling; Additives; Copper; Current density; Electronics packaging; Filling; Numerical models; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4673-1682-8

Electronic_ISBN

978-1-4673-1680-4

Type

conf

DOI

10.1109/ICEPT-HDP.2012.6474568

Filename

6474568