Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs

Author

Cheng, X.S. ; Hsieh, E.R. ; Chung, Steve S. ; Tsai, C.H. ; Tsai, T.L. ; Chiang, W.T. ; Tsai, C.T. ; Liang, C.W.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (v_inj) and ballistic efficiency (B_sat). DSS device with low series source/drain resistance and high B_sat of 0.47 leads to +15.2% of I_d enhancement over the conventional MOSFET. The VSM demonstrates more accurate B_sat and v_inj results than the conventional Temperature Dependent Method(TDM) ones.

Keywords

MOSFET; Schottky barriers; carrier mobility; semiconductor device models; DSS barrier MOSFET; VSM; ballistic efficiency; carrier transport parameter; dopant-segregated Schottky-barrier MOSFET; injection velocity; low series source-drain resistance; velocity saturation model; Decision support systems; MOSFETs; Mathematical model; Performance evaluation; Temperature dependence; Time division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872257

Filename

5872257