Metal wafer bonding for 3D interconnects and advanced packaging

Author

Dragoi, Viorel ; Pabo, E. ; Wagenleitner, T. ; Flotgen, C. ; Rebhan, B. ; Corn, K.

Author_Institution

EV Group, St. Florian am Inn, Austria

fYear

2012

fDate

13-16 Aug. 2012

Firstpage

114

Lastpage

120

Abstract

Metal films can be used as bonding layers at wafer-level in manufacturing processes for device assembly as well as just for electrical integration of different components. One has to distinguish between two categories of processes: metal thermo-compression bonding on one side, and bonding with formation of a eutectic or an intermetallic alloy layer. The different process principles determine also the applications area for each. From electrical interconnections to wafer-level packaging (with special emphasis on vacuum packaging) metal wafer bonding is a very important technology in manufacturing processes.

Keywords

interconnections; semiconductor device packaging; three-dimensional integrated circuits; wafer bonding; 3D interconnects; advanced packaging; bonding layers; device assembly; electrical integration; eutectic; intermetallic alloy layer; manufacturing processes; metal films; metal thermo compression bonding; metal wafer bonding; vacuum packaging; wafer level packaging; Bonding; Heating; Surface treatment; Tin; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4673-1682-8

Electronic_ISBN

978-1-4673-1680-4

Type

conf

DOI

10.1109/ICEPT-HDP.2012.6474582

Filename

6474582