On the weak spot concept in the dielectric breakdown of thin polymer films

Author

Saba, A. ; Laurent, C. ; Segui, Y.

Author_Institution

Lab. de Genie Electr., Univ. Paul Sabatier, Toulouse, France

fYear

1989

fDate

3-6 Jul 1989

Firstpage

72

Lastpage

76

Abstract

Films were prepared in a low-frequency (2.5-kHz) glow discharge diode system from hexamethyldisiloxane vapors at a pressure of 0.25 torr. Ramp and step tests were carried out to obtain voltage breakdown data. Statistical analysis of the weak-spot breakdown data shows that dielectric information can be extracted from their field functional dependence. As a consequence, these data cannot be considered as an extrinsic artefact but rather as a property of the film itself

Keywords

electric breakdown of solids; insulation testing; organic insulating materials; plasma deposited coatings; polymer films; 0.25 torr; 2.5 kHz; Al-polysiloxane-Al structure; dielectric breakdown; extrinsic artefact; field functional dependence; hexamethyldisiloxane vapors; low frequency glow discharge diode system; ramp testing; statistical analysis; step tests; thin polymer films; voltage breakdown data; weak-spot breakdown data; Artificial intelligence; Breakdown voltage; Dielectric breakdown; Dielectric losses; Impurities; Inductors; Pollution; Polymer films; Resistors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on

Conference_Location

Trondheim

Type

conf

DOI

10.1109/ICSD.1989.69164

Filename

69164