Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses

Author

Masoero, L. ; Molas, G. ; Blaise, P. ; Colonna, J.P. ; Vianello, E. ; Selmi, L. ; Papon, A.M. ; Lafond, D. ; Martin, F. ; Gély, M. ; Licitra, C. ; Barnes, J.P. ; Ghibaudo, G. ; De Salvo, B.

Author_Institution

CEA-LETI MINATEC, Grenoble, France

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

In this work we investigate the correlation between hydrogen content and leakage current through the Al₂O₃ layers of TANOS memories. We put in evidence that retention of TANOS memories is improved with the decrease of H concentration in the Al₂O₃ layer. Using atomistic simulations consolidated by detailed Al₂O₃ physico-chemical analyses, we find that interstitial H produces a midgap trap likely to participate to trap assisted conduction.

Keywords

leakage currents; random-access storage; Al₂O₃; TANOS memory; atomistic simulation; blocking layer; electrical characterization; hydrogen content; leakage current; physico-chemical analysis; physico-chemical material analysis; Aluminum oxide; Annealing; Energy states; Leakage current; Photonic band gap; Temperature measurement; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872268

Filename

5872268