Title :
Mechanism of low temperature Cu-In Solid-Liquid Interdiffusion bonding in 3D package
Author :
Yanhong Tian ; Ning Wang ; Yang Li ; Chunqing Wang
Author_Institution :
State Key Lab. of Adv. Welding & Joining, Harbin Inst. of Technol., Harbin, China
Abstract :
Three-dimensional (3D) integrated circuit (IC) packaging technology is under rapid development to realize high-density and high-speed transmission, and through silicon via (TSV) as advanced bonding technology is used to connect the wafers in chips extensively. Cu-In Solid-Liquid Interdiffusion (SOLID) low temperature bonding is a promising process for TSV interconnection. In this paper, the joint consisting of complete intermetallic compounds (IMCs) was designed as a potential alternative method to improve the reliability of solder joints in the electronic assemblies and systems operated at elevated temperatures. The samples of Si/Ti/Cu/In structure were used for the SOLID bonding. Scanning electron microscope (SEM) and Energy-dispersive X-ray (EDX) were used to observe the interfacial microstructure which showed the joints all consisted of the complete Cu-In IMCs. The appropriate bonding temperature and peak temperature were determined according to the result of observation. The results showed that at the temperature of 260°C, the Cu11In9 and Cu2In phase will be firstly formed in the solder. The Cu2In and Cu7In3 phase will be firstly formed at the temperature of 360°C.
Keywords :
X-ray chemical analysis; chemical interdiffusion; copper alloys; crystal microstructure; indium alloys; integrated circuit bonding; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; scanning electron microscopy; silicon alloys; solders; three-dimensional integrated circuits; titanium alloys; 3D IC packaging technology; 3D package; EDX; SEM; SOLID low temperature bonding; Si-Ti-Cu-In; TSV interconnection; advanced bonding technology; electronic assemblies; energy-dispersive X-ray; high-speed transmission; interfacial microstructure; low temperature solid-liquid interdiffusion bonding mechanism; scanning electron microscope; solder joints reliability; temperature 260 degC; temperature 360 degC; three-dimensional integrated circuit packaging technology; through silicon via; Abstracts; Clamps; Liquids; Reliability engineering; Semiconductor device reliability; Welding;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
DOI :
10.1109/ICEPT-HDP.2012.6474604
