Title :
Delay of the wave in a magnetoactive periodic nanostructure dielectric-semiconductor
Author :
Bulgakov, A.A. ; Kononenko, V.K.
Author_Institution :
Usikov Inst. of Radiophys. & Electron., NAS of Ukraine, Kharkov, Ukraine
Abstract :
Magnetoactive periodic nanostructure dielectric-semiconductor were theoretically studied. The delay of the waves in the structure were calculated by dispersive equation. Crystal lattice, tensor components permittivities, Voigt permittivity, electromagnetic wave, surface plasmon, plasma, collisions and cyclotron frequencies were calculated for semiconductor material n-InSb at 77 K with 100nm and 200 nm in thickness..
Keywords :
III-V semiconductors; collision processes; crystal structure; cyclotrons; dielectric materials; electromagnetic waves; indium compounds; nanostructured materials; permittivity; surface plasmons; InSb; Voigt permittivity; collisions; crystal lattice; cyclotron frequencies; dispersive equation; electromagnetic wave; magnetoactive periodic nanostructure dielectric-semiconductor; plasma; size 100 nm; size 200 nm; surface plasmon; temperature 77 K; tensor components permittivities;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2010 International Kharkov Symposium on
Conference_Location :
Kharkiv
Print_ISBN :
978-1-4244-7900-9
DOI :
10.1109/MSMW.2010.5546176
