Title :
Production of extremely low energy electron beam with silicon-based field emitter arrays and its application to space charge neutralization of low-energy and high-current ion beam
Author :
Gotoh, Yasuhito ; Taguchi, Shuhei ; Ikeda, Keita ; Kitagawa, Takayuki ; Tsuji, Hiroshi ; Ishikawa, Junzo ; Sakai, Shigeki
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
An electron beam with an energy as low as 5 eV and a current of 0.1 mA was produced by an electron source with a 10,000-tip silicon-based field emitter array (Si-FEA). In order to decelerate the electrons, we have designed an electrostatic lens system for the divergent beam extracted from the FEA. Spatial distribution of the electrons was investigated by a fluorescent screen with a multiple channel plate. Finally, space charge neutralization of low-energy and high-current ion beam was demonstrated with the present electron source.
Keywords :
electron sources; electrostatic lenses; elemental semiconductors; field emitter arrays; silicon; space charge; FEA; Si; current 0.1 mA; divergent beam extraction; electron source; electron spatial distribution; electrostatic lens system; extremely low energy electron beam production; fluorescent screen; high-current ion beam; low-energy ion beam; multiple channel plate; silicon-based field emitter arrays; space charge neutralization; Electrodes; Electron beams; Electron sources; Field emitter arrays; Ion beams; Lenses; Space charge; extremely low energy electron beam; field emitter array; low-energy and high-curent ion beam; space charge neutralization;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316868
