Spectra analysis of field emission current from boron doped diamond

Boron doped diamond films were synthesized using microwave plasma chemical vapor deposition (MPCVD) technique. The films were characterized using field emission scanning electron microscopy and Raman spectroscopy. The B₂O₃ concentration is varied from 1000 to 5000 ppm. With increase in B₂O₃ concentration particle size decreases, for 5000 ppm it is found to be 30 nm. The turn on field required to draw current density of 1 μA/cm² is found to be 0.80 V/μm for 5000 ppm B₂O₃ concentration films. Furthermore, spectral analysis of field emission current is carried out at base pressure of ~ 1 × 10^-8 mbar. The field emission current time (I-t) traces show `step´ and `spike´ like fluctuations, with 1/f^α type of behavior with α ~ 0.8. The fluctuations in the field emission current are due to various processes occurring on the emitter surface.