Title :
The MIIS structure capacitor fabricated with high permittivity material
Author :
Parnklang, Jirawath ; Surathammanun, Jarupich ; Julprapa, Attaya ; Riewruja, Vanchai ; Titiroongruang, Wisut
Author_Institution :
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Abstract :
The MIIS (Metal Insulator Intrinsic Semiconductor) structure capacitor consists of the aluminum, ZnO insulator and n-type silicon doped with gold atoms. The different electrical characteristics of the devices from the standard MOIS (Metal Oxide Intrinsic Semiconductor) structure capacitor which is fabricated from SiO2 are presented in this paper. The experimental results show that the threshold voltage of the devices (VTO) is smaller than the MOIS devices, the zinc oxide capacitor values (COX) are higher but the total capacitor value (CT) of the device does not change
Keywords :
MIS capacitors; MOSFET; aluminium; elemental semiconductors; gold; permittivity; silicon; zinc compounds; Al-ZnO-Si:Au; MIIS structure capacitor; electrical characteristics; high permittivity material; metal insulator intrinsic semiconductor; threshold voltage; total capacitor value; Aluminum; Capacitors; Electric variables; Gold; Insulation; Metal-insulator structures; Permittivity; Silicon; Threshold voltage; Zinc oxide;
Conference_Titel :
TENCON 99. Proceedings of the IEEE Region 10 Conference
Conference_Location :
Cheju Island
Print_ISBN :
0-7803-5739-6
DOI :
10.1109/TENCON.1999.818623
