Title :
Temperature dependence of Q in spiral inductors fabricated in a silicon-germanium/BiCMOS technology
Author :
Groves, Rob ; Stein, Ken ; Harame, Dave ; Jadus, Dale
Author_Institution :
Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA
fDate :
29 Sep-1 Oct 1996
Abstract :
The behavior of on-chip planar inductors fabricated over a conductive silicon substrate has been characterized over the temperature range from -55°C to 125°C for the first time. Q was observed to decrease with increasing temperature over the frequency range up to and including the frequency where Q peaks. Inductance was seen to vary little across the temperature and frequency range up to one-half the self-resonant frequency. The behavior of Q with temperature was explained in the context of the temperature coefficients of its resistive parasitics. An energy-based definition for Q that takes into account the distributed nature of the planar inductor was presented and shown to give higher numbers than the conventional impedance-based definition at frequencies above one-tenth of the self-resonant frequency
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Q-factor; equivalent circuits; inductors; integrated circuit metallisation; -55 to 125 C; 2 micron; Al metallisation; Al-Si; GeSi; Q-factor; SiGe BiCMOS technology; conductive Si substrate; energy-based definition; inductance; onchip planar inductors; resistive parasitics; spiral inductors; temperature coefficients; temperature dependence; BiCMOS integrated circuits; Frequency estimation; Germanium silicon alloys; Impedance; Inductance; Inductors; Silicon germanium; Spirals; Temperature dependence; Temperature distribution;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554635