Title :
Reliability of high-power diode lasers with oxide-defined stripes formed by pulsed anodization
Author :
Clausen, E.M., Jr. ; Bull, D.J. ; O, J.S. ; Zory, P.S.
Author_Institution :
Polaroid Corp., Noorwood, MA, USA
Abstract :
Summary form only given. The key to producing low-cost, reliable, high power diode lasers is to use processes and techniques that are in themselves low cost, reliable, and simple to control. Pulsed anodization (PA) is a process that embodies these qualities for forming the current confinement stripe on high-power diode lasers. There have been several previous studies that have described the merits of the PA process. This work demonstrates, for the first time to our knowledge, that the native oxides formed by PA on GaAs-AlGaAs laser material produce diode lasers that have equivalent reliability (several thousands of power-on hours) to diode lasers made with chemical-vapor deposition (CVD) formed oxide. A comparison of the processing steps used to fabricate the diode lasers used in this study is shown.
Keywords :
III-V semiconductors; aluminium compounds; anodisation; chemical vapour deposition; epitaxial growth; gallium arsenide; laser reliability; optical fabrication; quantum well lasers; semiconductor growth; CVD; GaAs-AlGaAs; GaAs-AlGaAs laser material; chemical-vapor deposition; current confinement stripe; diode laser fabrication; diode lasers; equivalent reliabilit; high-power diode laser reliability; high-power diode lasers; low-cost reliable high power diode lasers; native oxides; oxide-defined stripes; processing steps; pulsed anodization; Chemical lasers; Chemical vapor deposition; Costs; Diode lasers; Materials reliability; Optical control; Optical materials; Optical pulses; Power lasers; Pulsed laser deposition;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675832