Title :
Simulation of effects of geometrical parameters on the performance of a gated CuO nanowire cold cathode vacuum triode
Author :
Li, Guangxiang ; Zhong, Biying ; Chen, Jun
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
The effects of geometrical parameters on the performance of a gated CuO nanowire cold cathode vacuum triode were studied by a numerical simulation. A finite element method was used to simulate the electrical field distribution and electron trajectory. The transfer and output characteristics of the nanowire cold cathode vacuum triode were simulated for devices with different geometrical parameters. It was found that the variation of the gate to cathode distance strongly affects the electrical characteristics of the triode.
Keywords :
cathodes; copper compounds; finite element analysis; nanowires; triodes; CuO; cathode distance; electrical characteristics; electrical field distribution simulation; electron trajectory; finite element method; geometrical parameter effect simulation; nanowire cold cathode vacuum triode; numerical simulation; Anodes; Cathodes; Educational institutions; Integrated circuit modeling; Logic gates; Microelectronics; Performance evaluation; CuO nanowire; finite element method; vacuum triode;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316944
