Title :
Improved field emission properties of GaAs/MgO-coated single-walled carbon nanotube
Author :
Park, Taehee ; Lee, Jongtaek ; Lee, Seungjin ; Park, Hyunjune ; Yi, Whikun
Author_Institution :
Dept. of Chem., Hanyang Univ., Seoul, South Korea
Abstract :
We measured the field emission (FE) properties and life time stability of single walled carbon nanotubes (SWNTs) after coating with wide-band-gap material (WBGM) and successive negative electron affinity (NEA) material, i.e., magnesium oxide and successive gallium arsenide. Their turn-on field and emission current densities were measured and compared with pristine SWNT film. The FE was increased successively after MgO coating and subsequent GaAs coating for SWNTs. A lifetime test revealed that GaAs/MgO/SWNTs protects SWNT film during FE under exposure to O2 gas. The field-enhancement factor, β, was calculated from the Fowler-Nordheim equation of FE results.
Keywords :
III-V semiconductors; carbon nanotubes; coatings; current density; electron affinity; electron field emission; gallium arsenide; life testing; magnesium compounds; FE property; Fowler-Nordheim equation; GaAs-MgO; NEA material; WBGM; emission current density; field emission property; field-enhancement factor; lifetime stability test; magnesium oxide; single walled carbon nanotubes; single-walled carbon nanotube; successive gallium arsenide; successive negative electron affinity material; turn-on field; wideband-gap material; Carbon nanotubes; Current density; Films; Gallium arsenide; Iron; negative electron affinity material; single walled carbon nanotube; wide-band-gap material;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316969
