High-efficiency luminescence up-conversion of infrared to red light in type-I and type-II Al/sub x/Ga/sub 1-x/As/InGaP single heterostructures

Author

Yong-Hoon Cho ; Lim, H. ; Jhe, W.

Author_Institution

Dept. of Phys., Seoul Nat. Univ., South Korea

Volume

3

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

955

Abstract

Photoluminescence (PL) up-conversion or anti-Stokes PL (ASPL) is a phenomenon in which the photon energy of PL output is higher than that of the excitation source. The ASPL phenomena in heterojunctions (HJs) and quantum wells (QWs) have recently received considerable attention since they are believed to have a mechanism quite different from the traditional one in bulk materials with potential device applications such as novel light emitting devices which take advantage of high energy up-conversion efficiencies. The ASPL phenomena in HJs or QWs can be observed with an extremely small excitation density of 0.1 W cm/sup -2/ at temperatures below 10 K, in contrast to the case of bulk semiconductors.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical frequency conversion; photoluminescence; semiconductor heterojunctions; Al/sub x/Ga/sub 1-x/As/InGaP single heterostructures; AlGaAs-InGaP; anti-Stokes photoluminescence; high-efficiency luminescence up-conversion; Charge carrier processes; Density measurement; Energy measurement; Heterojunctions; Luminescence; Photonic band gap; Physics; Power engineering and energy; Radiative recombination; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.817918

Filename

817918