DocumentCode :
3506207
Title :
Temperature dependence of the field-emission from the tungsten oxide nanowires
Author :
Chen, W.Q. ; Wu, J.Q. ; Dong, L.S. ; Chen, Jun
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
2
Abstract :
Field emission characteristics of tungsten oxide (W18O49) nanowires under different temperature was investigated. The results show that the field emission currents increase with increasing temperature. Sharp increase of current was observed in the range from 473K to 673K. A mechanism based on defect-assisted emission process was used to explain the observed phenomena.
Keywords :
electron field emission; nanowires; tungsten compounds; W18O49; defect-assisted emission process; field emission characteristics; field emission currents; temperature 473 K to 673 K; temperature dependence; tungsten oxide nanowires; Educational institutions; Materials; Nanowires; Temperature; Temperature dependence; Temperature measurement; Tungsten; Tungsten oxide nanowires; field emission; temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
ISSN :
pending
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IVNC.2012.6316976
Filename :
6316976
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3506207
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