DocumentCode :
3506637
Title :
A complementary bipolar technology for low cost and high performance mixed analog/digital applications
Author :
Miwa, Hiroyuki ; Ammo, Hiroaki ; Ejiri, Hirokazu ; Kanematsu, Shigeru ; Gomi, Takayuki
Author_Institution :
Bipolar/CCD LSI Div., Sony Corp., Kanagawa, Japan
fYear :
1996
fDate :
29 Sep-1 Oct 1996
Firstpage :
185
Lastpage :
188
Abstract :
A complementary bipolar technology for low cost and high performance mixed analog/digital applications is presented. The technology features 30 GHz fT npn, 12 GHz fT high β npn, and 4 GHz fT pnp transistors. Numerous additional devices such as I2L, Pch JFETs, and MIS capacitances are possible on-chip to allow for a variety of applications ranging from telecommunications to consumer products
Keywords :
bipolar integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; 12 GHz; 30 GHz; 4 GHz; I2L; JFET; MIS capacitors; complementary bipolar technology; low cost applications; mixed analog/digital applications; onchip devices; Boron; Capacitance; Circuits; Costs; Epitaxial layers; Fabrication; JFETs; Silicon; Stress; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-3516-3
Type :
conf
DOI :
10.1109/BIPOL.1996.554643
Filename :
554643
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3506637
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