Title :
Error-correcting schemes with dynamic thresholds in nonvolatile memories
Author :
Zhou, Hongchao ; Jiang, Anxiao ; Bruck, Jehoshua
Author_Institution :
Electr. Eng. Dept., California Inst. of Technol., Pasadena, CA, USA
fDate :
July 31 2011-Aug. 5 2011
Abstract :
Predetermined fixed thresholds are commonly used in nonvolatile memories for reading binary sequences, but they usually result in significant asymmetric errors after a long duration, due to voltage or resistance drift. This motivates us to construct error-correcting schemes with dynamic reading thresholds, so that the asymmetric component of errors are minimized. In this paper, we discuss how to select dynamic reading thresholds without knowing cell level distributions, and present several error-correcting schemes. Analysis based on Gaussian noise models reveals that bit error probabilities can be significantly reduced by using dynamic thresholds instead of fixed thresholds, hence leading to a higher information rate.
Keywords :
binary sequences; error correction; random-access storage; asymmetric errors; binary sequences; dynamic reading thresholds; error correcting schemes; information rate; nonvolatile memories; Ash; Bit error rate; Decoding; Error correction codes; Nonvolatile memory; Reliability; Threshold voltage;
Conference_Titel :
Information Theory Proceedings (ISIT), 2011 IEEE International Symposium on
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4577-0596-0
Electronic_ISBN :
2157-8095
DOI :
10.1109/ISIT.2011.6033936