Title :
Efficient computation of modulation bandwidth of GaInAsP/InP Distributed Reflector (DR) laser with quantum wire structures
Author :
Mobarak, Mahjabin ; Hossain, Md Nahid ; Yousuf, Abdul Hamid Bin ; Mahmudullah, Saeed ; Routh, Tushar Kanti
Author_Institution :
Dept. of Appl. Phys. & Electron. & Commun. Eng., Univ. of Dhaka, Dhaka, Bangladesh
Abstract :
In this study modulation bandwidth of GaInAsP/InP laser has been analyzed. Distributed Reflector (DR) laser consisting of a DFB (distributed feedback) laser with high reflection DBR( distributed Bragg reflector) at the rear end is studied by considering wirelike active region. Highest modulation bandwidth of 16 GHz has been realized theoretically. Maximum bandwidth is observed in the DR laser with Double Quantum wire stack, 180μm cavity length and 120nm wire width. The proposed structure also provides good static characteristics such as threshold current of 0.53mA and differential quantum efficiency of about 49.5%.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser cavity resonators; light reflection; optical modulation; quantum well lasers; semiconductor quantum wires; DFB laser; DR laser; GaInAsP-InP; bandwidth 16 GHz; cavity length; current 0.53 mA; differential quantum efficiency; distributed Bragg reflector laser; distributed feedback laser; double quantum wire structures; high reflection DBR laser; modulation bandwidth; size 120 nm; size 180 mum; static characteristics; threshold current; wire width; wirelike active region; Bandwidth; Cavity resonators; Laser theory; Modulation; Threshold current; Wires; Distributed reflector laser; Modulation bandwidth; Quantum wire;
Conference_Titel :
Informatics, Electronics & Vision (ICIEV), 2012 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1153-3
DOI :
10.1109/ICIEV.2012.6317398
