Title :
Plasma-charging damage and ESD, help each other?
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
ESD and plasma-charging damage are different modes of electrical stress that degrade integrated circuits. They are quite different and yet share many similarities. As integrated circuit technology continues to progress, the challenge of how to protect the ultra-thin gate-oxide from both of these phenomena is faced. This paper discusses the common problem shared by both communities.
Keywords :
dielectric thin films; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit technology; plasma materials processing; protection; surface charging; surface treatment; ESD; IC degradation; electrical stress modes; integrated circuit technology; integrated circuits; plasma-charging damage; ultra-thin gate-oxide protection; Circuits; Degradation; Diodes; Electrostatic discharge; MOS devices; Plasma density; Plasma devices; Protection; Tunneling; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-58637-007-X
DOI :
10.1109/EOSESD.1999.818987
