Title :
A new polysilicon resistor model considering geometry dependent voltage characteristics for the deep sub-micron CMOS process
Author :
Ko, Seok Yong ; Kim, Jin Soo ; Lim, Gwang Hyeon ; Kim, Sung Ki
Author_Institution :
DongbuAnam Semicond., Kyunggi-do, South Korea
Abstract :
The conventional resistor model for circuit simulation cannot describe voltage coefficient change along with different width and length resistors. In this paper, resistor geometry dependence on voltage coefficient was studied and a new model was proposed to enhance the accuracy. In addition, parameter extraction methodology for this model was introduced.
Keywords :
CMOS integrated circuits; resistors; semiconductor device models; circuit simulation; geometry dependent voltage; parameter extraction methodology; polysilicon resistor; submicron CMOS process; voltage coefficient; CMOS process; CMOS technology; Electrical resistance measurement; Geometry; MIM capacitors; Q measurement; Resistors; Semiconductor device modeling; Solid modeling; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN :
1-4244-0167-4
DOI :
10.1109/ICMTS.2006.1614268
