DocumentCode
3512303
Title
A new polysilicon resistor model considering geometry dependent voltage characteristics for the deep sub-micron CMOS process
Author
Ko, Seok Yong ; Kim, Jin Soo ; Lim, Gwang Hyeon ; Kim, Sung Ki
Author_Institution
DongbuAnam Semicond., Kyunggi-do, South Korea
fYear
2006
fDate
6-9 March 2006
Firstpage
27
Lastpage
30
Abstract
The conventional resistor model for circuit simulation cannot describe voltage coefficient change along with different width and length resistors. In this paper, resistor geometry dependence on voltage coefficient was studied and a new model was proposed to enhance the accuracy. In addition, parameter extraction methodology for this model was introduced.
Keywords
CMOS integrated circuits; resistors; semiconductor device models; circuit simulation; geometry dependent voltage; parameter extraction methodology; polysilicon resistor; submicron CMOS process; voltage coefficient; CMOS process; CMOS technology; Electrical resistance measurement; Geometry; MIM capacitors; Q measurement; Resistors; Semiconductor device modeling; Solid modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN
1-4244-0167-4
Type
conf
DOI
10.1109/ICMTS.2006.1614268
Filename
1614268
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