Title :
New test structures for extraction of base sheet resistance in BiCMOS technology
Author :
Raya, C. ; Pourchon, F. ; Celi, D. ; Laurens, M. ; Zimmer, T.
Author_Institution :
Central R&D, ST Microelectron., Crolles, France
Abstract :
For process monitoring and device modeling, a new method to determine the different components of the base resistance of bipolar transistors has been developed. Dual base test structures have been improved to extract the sheet resistance value of each of these components using dc measurements. This method is applied to a state-of-art double poly ST BiCMOS technology, and results are discussed.
Keywords :
BiCMOS integrated circuits; bipolar transistors; electric resistance measurement; semiconductor device measurement; semiconductor device models; BiCMOS technology; base sheet resistance extraction; bipolar transistors; dc measurements; device modeling; process monitoring; BiCMOS integrated circuits; Bipolar transistors; Contact resistance; Current measurement; Doping; Electrical resistance measurement; Microelectronics; Monitoring; Research and development; Testing;
Conference_Titel :
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN :
1-4244-0167-4
DOI :
10.1109/ICMTS.2006.1614270
