Title :
Simplified loss analysis for high speed SiC MOSFET inverter
Author :
Shen, Miaosen ; Krishnamurthy, Shashank
Author_Institution :
United Technol. Res. center, East Hartford, CT, USA
Abstract :
SiC devices provide significant performance improvement compared to traditional Si devices, such as lower conduction loss and higher switching speed. The ability to accurately predict converter loss is essential for converter design. This paper provides a simplified loss model, which enables users to calculate converter loss based on datasheet values. Also, it provides insight to major switching loss contributors.
Keywords :
MOSFET; invertors; power convertors; silicon compounds; wide band gap semiconductors; SiC; converter loss calculation; converter loss prediction design; high speed MOSFET inverter; higher switching speed; lower conduction loss; simplified loss model analysis; switching loss contributor; Inverters; Logic gates; Loss measurement; MOSFET circuits; Silicon carbide; Switches; Switching loss;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1215-9
Electronic_ISBN :
978-1-4577-1214-2
DOI :
10.1109/APEC.2012.6166047
