Design and analysis of very low voltage charge pumps for RFID tags

Author

Amini, S. ; Plett, C.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, ON

fYear

2008

fDate

15-15 Oct. 2008

Firstpage

9

Lastpage

12

Abstract

The design and analysis of very low-voltage driven charge pumps powered by RF telemetry is proposed. The use of thick oxide zero threshold voltage transistors along with appropriately sized boosting capacitors and matching techniques allows for charge pumps capable of achieving high voltage DC outputs with very low input voltages. Two test chips have been fabricated, an 11 stage pump and a 12 stage pump in 1.2 V 0.13-mum standard CMOS process. The pumps are capable of generating an output voltage above 1.2 volts with input voltages below 100 mV making them ideal for generating DC supplies from low RF scavenged sources.

Keywords

CMOS analogue integrated circuits; charge pump circuits; energy harvesting; radiofrequency identification; radiotelemetry; CMOS process; RF scavenged sources; RF telemetry; RFID tags; boosting capacitors; low-voltage driven charge pumps; matching techniques; power scavenging; size 0.13 mum; thick oxide zero threshold voltage transistors; voltage 1.2 V; Boosting; Capacitors; Charge pumps; DC generators; Low voltage; RFID tags; Radio frequency; Telemetry; Testing; Threshold voltage; RFID tag; charge pump; low-voltage; power scavenging;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems and Nanoelectronics Research Conference, 2008. MNRC 2008. 1st

Conference_Location

Ottawa, Ont.

Print_ISBN

978-1-4244-2920-2

Electronic_ISBN

978-1-4244-2921-9

Type

conf

DOI

10.1109/MNRC.2008.4683365

Filename

4683365