Title :
1kW S-band Solid State radar amplifier
Author :
Kwack, Ju-Young ; Kim, Ki-Won ; Cho, Samuel
Author_Institution :
RFHIC Corp., Suwon, South Korea
Abstract :
A GaN based highly integrated Solid State Power Amplifier (SSPA) is developed for S-band radar applications. The power amplifier delivers more than 1 KW within a 400 MHz bandwidth with 55 dB gain and a typical 34% PAE. The SSPA includes a negative voltage supply, sequential bias circuit, and temperature sensor circuit. Its compact and lightweight design is suitable for many radar applications.
Keywords :
III-V semiconductors; gallium compounds; microwave amplifiers; power amplifiers; radar applications; wide band gap semiconductors; GaN; PAE; S-band solid state radar amplifier; SSPA; bandwidth 400 MHz; efficiency 34 percent; frequency 2900 MHz to 3300 MHz; gain 55 dB; power 1 kW; power amplifier; temperature sensor circuit; Gallium nitride; HEMTs; Performance evaluation; Radar; Radio frequency; Silicon carbide; Solids; GaN; Power Amplifier; Radar;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual
Conference_Location :
Clearwater Beach, FL
Print_ISBN :
978-1-61284-081-9
DOI :
10.1109/WAMICON.2011.5872866
