• DocumentCode
    3514213
  • Title

    Toward a 3D model of Differential Electric-Field Sensitive Field Effect Transistor (DeFET)

  • Author

    Ibrahim, Mohamed F. ; Ghalab, Yehya H. ; Badawy, Wael

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB
  • fYear
    2008
  • fDate
    15-15 Oct. 2008
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    This paper presents a 3D model for a differential electric-field sensitive field effect transistor (DeFET), which is a new CMOS electric-field sensor. The DeFET is used to detect very small partials especially for environmental purposes. This paper also describes the DeFETpsilas theory of operation in addition to simulation results that confirm the DeFETpsilas theory of operation.
  • Keywords
    CMOS integrated circuits; electric sensing devices; field effect transistors; 3D model; CMOS electric-field sensor; DeFET; differential electric-field sensitive field effect; Biosensors; Chemical technology; DNA; Equivalent circuits; FETs; Lab-on-a-chip; Nonuniform electric fields; Physics; Semiconductor device modeling; Voltage; 3D Model; DeFET; electrode; micro; sensing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems and Nanoelectronics Research Conference, 2008. MNRC 2008. 1st
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    978-1-4244-2920-2
  • Electronic_ISBN
    978-1-4244-2921-9
  • Type

    conf

  • DOI
    10.1109/MNRC.2008.4683398
  • Filename
    4683398