DocumentCode
3514213
Title
Toward a 3D model of Differential Electric-Field Sensitive Field Effect Transistor (DeFET)
Author
Ibrahim, Mohamed F. ; Ghalab, Yehya H. ; Badawy, Wael
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB
fYear
2008
fDate
15-15 Oct. 2008
Firstpage
141
Lastpage
144
Abstract
This paper presents a 3D model for a differential electric-field sensitive field effect transistor (DeFET), which is a new CMOS electric-field sensor. The DeFET is used to detect very small partials especially for environmental purposes. This paper also describes the DeFETpsilas theory of operation in addition to simulation results that confirm the DeFETpsilas theory of operation.
Keywords
CMOS integrated circuits; electric sensing devices; field effect transistors; 3D model; CMOS electric-field sensor; DeFET; differential electric-field sensitive field effect; Biosensors; Chemical technology; DNA; Equivalent circuits; FETs; Lab-on-a-chip; Nonuniform electric fields; Physics; Semiconductor device modeling; Voltage; 3D Model; DeFET; electrode; micro; sensing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems and Nanoelectronics Research Conference, 2008. MNRC 2008. 1st
Conference_Location
Ottawa, Ont.
Print_ISBN
978-1-4244-2920-2
Electronic_ISBN
978-1-4244-2921-9
Type
conf
DOI
10.1109/MNRC.2008.4683398
Filename
4683398
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