• DocumentCode
    351471
  • Title

    Quantum engineering of nanoelectronic devices

  • Author

    Arora, Vijay K.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    19
  • Abstract
    The performance evaluation and characterization of nano-meter scale devices is shown to be considerably affected by the presence of quantum waves that transform the energy character of an electron from classical (analog) to quantum (digital). A presence of high electric field makes familiar Ohm´s law invalid, necessitating the use of velocity saturation effects that limit the electron velocity in nano-devices to thermal velocity or Fermi velocity depending on the degeneracy of the sample. The novel concepts behind quantum-engineered nanostructures are reviewed
  • Keywords
    quantum interference devices; Fermi velocity; degeneracy; electron velocity; high-field nonOhmic transport; nanoelectronic device; quantum engineering; quantum wave; thermal velocity; velocity saturation; Application software; Consumer electronics; Electrons; Gallium arsenide; High speed optical techniques; Nanoscale devices; Optical materials; Optical saturation; Optical superlattices; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.840526
  • Filename
    840526