Title :
The small-signal parameters and noise characterization for inverted GaAs/AlGaAs high electron mobility transistors
Author :
Liu, Kuo-Wei ; Anwar, A.F.M.
Author_Institution :
Graduate Inst. of Mater. Sci., Chinese Culture Univ., Taipei, Taiwan
Abstract :
A complete analytical noise analysis for I-HEMTs devices is presented. The author would like to extend the proposed noise research to other HEMT structure, such as GaAs/AlGaAs Inverted HEMT structures which can be considered as an alternative devices for high-frequency applications
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor device noise; GaAs-AlGaAs; I-HEMT; high frequency device; inverted high electron mobility transistor; noise; small-signal analysis; Circuit noise; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Noise figure; Noise generators; Ohmic contacts; Transconductance; Voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840541
