The real band diagram for the metal-semiconductor heterojunction

Author

Shekhovtsov, L.V.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

Volume

1

fYear

2000

fDate

2000

Firstpage

193

Abstract

For NbN-GaAs heterostructures the transverse photovoltage spectral curves were studied. The photovoltage taken for the samples annealed at T=850°C changed its polarity near the GaAs intrinsic absorption edge. A complicated form of the observed spectral curves is related to the interaction between the photocurrents generated by illumination in both the GaAs bulk and space charge region near the NbN film. Heat annealing at T=950°C makes the near-surface band bending uniform; the photovoltage holds its polarity in the spectral range studied. Basing on the analysis of the spectral curves features, we have built a real band diagram for the NbN-GaAs heterojunction

Keywords

III-V semiconductors; annealing; gallium arsenide; niobium compounds; photovoltaic effects; semiconductor-metal boundaries; space charge; 850 to 950 C; NbN-GaAs; absorption edge; annealing; band structure; metal-semiconductor heterojunction; photovoltage; space charge; spectral curve; Absorption; Annealing; Charge carriers; Gallium arsenide; Heterojunctions; Lighting; Photoconductivity; Space charge; Spectral analysis; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.840553

Filename

840553