Title :
A study on the properties and fabrication of BaTiO3 thin films by the RF sputtering
Author :
Ryu, Ki-Won ; Bae, Seon-Gi ; Lee, Young-Hie
Author_Institution :
Yeojoo Tech. Coll., Kyunggi, South Korea
Abstract :
BaTiO3 thin films were prepared on Pt(100)/SiO2 /Si(100) substrates by RF sputtering, whose structural, crystallographic, and electrical properties were examined according to the deposition conditions and annealing temperatures. The optimal Ar/O 2 gas flow rate, sputtering pressure, RF power and annealing temperature were 4/1, 12[mTorr], 120[W] and 650[°C] for 1[hr], respectively. From the results of X-ray diffraction (XRD) and D-E hysteresis characteristics, BaTiO3 thin films deposited at the optimal conditions showed a ferroelectric phase. The growth rate of deposited film was about 0.75[Å/sec], and the dielectric constant and dielectric loss were about 683 and 0.05, respectively
Keywords :
X-ray diffraction; annealing; barium compounds; dielectric hysteresis; dielectric losses; ferroelectric thin films; permittivity; sputtered coatings; BaTiO3; BaTiO3 thin film; Pt(100)/SiO2/Si(100) substrate; RF sputtering; X-ray diffraction; annealing; crystallographic properties; dielectric constant; dielectric loss; electrical properties; ferroelectric phase; hysteresis; structural properties; Annealing; Crystallography; Dielectric constant; Dielectric losses; Dielectric thin films; Fabrication; Radio frequency; Sputtering; Substrates; Temperature;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616618
