Title :
Broadband quantum dots-in-a-well solar cells
Author :
Chang, C.H. ; Tzeng, T.E. ; Lay, T.S. ; Cho, H. ; Feng, David J Y
Author_Institution :
Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
The conversion efficiency of broadband InGaAs quantum dots-in-a-well (DWell) solar cells has been improved by optimizing the p-type doping and growth temperature for the DWell. The solar efficiency (η) is 130% times of the counterpart of GaAs baseline cell. Moreover we obtain the best photovoltaic result by inserting matrix pattern instead grid pattern and using wet etching to enhance the conversion efficiency. The photovoltaic characteristics shows an efficiency of 10.86%.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; semiconductor doping; semiconductor quantum dots; solar cells; DWell solar cells; InGaAs; broadband quantum dot-in-a-well solar cells; conversion efficiency; efficiency 10.86 percent; efficiency 130 percent; grid pattern; growth temperature; matrix pattern; p-type doping; photovoltaic characteristics; wet etching; Doping; Etching; Gold; Asymmetric quantum dots; GaAs; InGaAs; Molecular beam epitaxy; photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317719
