DocumentCode :
3515277
Title :
Design and simulation of Multi-Quantum-Well GaAs/AlGaAs single junction p-i-n with back surface DBR reflector
Author :
Fardi, H. ; Jan, M. ; Van Zeghbroeck, Bart
Author_Institution :
Dept. of Electr. Eng., Univ. of Colorado Denver, Denver, CO, USA
fYear :
2012
fDate :
3-8 June 2012
Abstract :
This paper reports on the design and simulation of a Multi Quantum Well (MQW) AlGaAs/GaAs single p-i-n junction solar cell with a Distributed Bragg Reflector (DBR) placed at back surface. The DBR structure reflects the part of the spectrum that benefits from absorption in the AlGaAs QW structure, while being transparent to the IR spectrum. The efficiencies and short-circuit currents for the AlGaAs MQW cell with and without DBR are simulated. The efficiencies and short-circuit currents of an optimized AlGaAs MQW cell with and without DBR are simulated. Results obtained show improvement in short circuit current, open circuit voltage and efficiency when both MQW and DBR were used. Simulation results predict an efficiency of about 28.4% for the MQW AlGaAs-DBR single p-i-n junction photovoltaic cell under the presence of both radiative and non-radiative recombination mechanisms.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; infrared spectra; photovoltaic cells; semiconductor quantum wells; short-circuit currents; solar cells; GaAs-AlGaAs; IR spectrum; back surface DBR reflector; distributed Bragg reflector; multiquantum-well GaAs/AlGaAs single junction p-i-n; nonradiative recombination; open circuit voltage; short-circuit currents; single p-i-n junction photovoltaic cell; single p-i-n junction solar cell; Distributed Bragg reflectors; Gallium arsenide; Photovoltaic cells; Photovoltaic systems; Quantum well devices; Reflectivity; AlGaAs/GaAs; DBR; Multi Quantum Well; modeling and Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317721
Filename :
6317721
Link To Document :
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