Title :
Effects of the thickness on the dielectric reliability of multilayered BaTiO3 insulating layer
Author :
Oh, Jeong-Hoon ; Lee, Yun-Hi ; Ju, Hyeong-Kwon ; Park, Chang-Yub ; Shin, D.K. ; Oh, Myung Hwan
Author_Institution :
Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
The dielectric reliability of the multilayered BaTiO3 thin films with different thickness was studied by TZDB and TDDB techniques. The surface roughness and the composition of the thin films were investigated by AFM and AES. The results indicate that TZDB behavior is related to the roughness of the surface of the multilayered BaTiO3 thin films and TDDB characteristics as well as the quantity of the leakage current may be explained in terms of the formation and thickness of the transition region
Keywords :
Auger effect; atomic force microscopy; barium compounds; dielectric thin films; electric breakdown; leakage currents; surface topography; AES; AFM; BaTiO3; TDDB; TZDB; composition; dielectric reliability; insulating layer; leakage current; multilayered BaTiO3 thin film; surface roughness; Artificial intelligence; Dielectric thin films; Dielectrics and electrical insulation; Electric breakdown; Leakage current; Phosphors; Rough surfaces; Sputtering; Surface roughness; Transistors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616621
