InP/InGaAs bipolar phototransistor as a front-end photoreceiver for HPR distribution networks

Author

Gonzalez, C. ; Thuret, J. ; Benchimol, J.L. ; Riet, M. ; Cadiou, J.F. ; Legaud, P.

Author_Institution

Groupement d´´Interet Econ., OPTO+, Marcoussis, France

fYear

1999

fDate

1999

Firstpage

35

Abstract

The assessment of an improved InP/InGaAs phototransistor as a front-end photoreceiver for a hybrid fibre radio (HBF) link was realised. The phototransistor performances were investigated as a direct photodetector and as an up-converting mixer. A preliminary system evaluation of the device was performed

Keywords

III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; integrated optoelectronics; microwave links; microwave photonics; millimetre wave mixers; optical fibre networks; optical receivers; photodetectors; phototransistors; radio networks; HFR distribution networks; InP-InGaAs; bipolar phototransistor; direct photodetector; front-end photoreceiver; hybrid fibre radio link; phototransistor performance; system evaluation; up-converting mixer; Frequency; Indium gallium arsenide; Indium phosphide; Optical fiber devices; Optical fiber networks; Optical modulation; Performance evaluation; Photodetectors; Phototransistors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1999. MWP '99. International Topical Meeting on

Conference_Location

Melbourne, Vic.

Print_ISBN

0-7803-5558-X

Type

conf

DOI

10.1109/MWP.1999.819646

Filename

819646