DocumentCode
3516987
Title
Si thin film solar cell with asymmetric p-n junction
Author
Ko, Myung-Dong ; Baek, Chang-Ki ; Rim, Taiuk ; Park, Sooyoung ; Jeong, Yoon-Ha
Author_Institution
Dept. of Electr. Eng., POSTECH, Pohang, South Korea
fYear
2012
fDate
3-8 June 2012
Abstract
We propose an asymmetric structure using simulation to improve the electrical characteristics of the solar cell. This structure is designed by shrinking the bottom core diameter in radial structure. It causes the total reflection of the incident light in the outer wall and the light concentration in the bottom core. Consequently, an asymmetric solar cell (ASC) shows the increase in current density and cell efficiency (CE), which is 10 % higher than those of a symmetric solar cell (SSC). By increasing doping concentration of the shell and applying light trapping techniques i.e. anti-reflective coating and back-surface-field, the ASC showed high CE compared with the SSC. This novel structure offers an opportunity for effectively improving the CE.
Keywords
antireflection coatings; elemental semiconductors; light reflection; radiation pressure; semiconductor thin films; silicon; solar cells; anti-reflective coating; asymmetric p-n junction; asymmetric solar cell; asymmetric structure; back-surface-field; cell efficiency; current density; doping concentration; electrical characteristics; incident light total reflection; light concentration; light trapping techniques; radial structure; thin film solar cell; Absorption; Films; Indexes; Nanostructures; Photovoltaic systems; Physics; Silicon; asymmetric solar cell; photovoltaic devices; radial p-n junction; sentaurus device simulator; silicon nanowire;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6317820
Filename
6317820
Link To Document